Erratum: Profile estimation of high‐concentration arsenic diffusion in silicon
نویسندگان
چکیده
منابع مشابه
Diffusion and Activation of Arsenic in Silicon Germanium Alloys
properties as a n-type dopant in Silicon Germanium (SiGe), to enable the fabrication of a wide range of devices. With the recent success of the strained Si MOSFET, new markets are expected to be developed based upon strained Si/relaxed SiGe CMOS circuits. An understanding of n-type dopant diffusion in SiGe, specifically the formation of the source/drain regions in the NMOS and the n-body region...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1973
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1661938